例: SP1231F|SP1233FL|SW6124|SW6106|CS8626
DW3402

Part NO:DW3402

封裝:{dede:field.fz/}

工作電壓:{dede:field.gddy/}

簡介:{dede:field.jianj/}
  • 30V/5.1A N Channel Advanced Power MOSFET 

    Features

    ? Low RDS(on) @VGS=10V

    ? 3.3V Logic Level Control

    ? N Channel SOT23 Package

    ? Pb?Free, RoHS Compliant


    V(BR)DSS

    RDS(ON) Typ

    ID Max


    30V

    28m? @10V


    5.1A

    34m? @4.5V



    Applications

    ? DC-to-DC converters

    ? Power management in battery-driven portables

    ? Low-side load switch and charging switch for portable devices

    ? Switching circuits

    ? High-speed line driver



    Order Information

    Product

    Package

    Marking

    Packing

    DW3402

    SOT23

    A29T

    3000PCS/Reel


    Absolute Maximum Ratings

    Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.


    Symbol

    Parameter

    Rating

    Unit

    Common Ratings (TA=25°C Unless Otherwise Noted)

    VGS

    Gate-Source Voltage

    ±16

    V

    V(BR)DSS

    Drain-Source Breakdown Voltage

    30

    V

    TJ

    Maximum Junction Temperature

    150

    °C

    TSTG

    Storage Temperature Range

    -50 to 150

    °C

    Mounted on Large Heat Sink

    IDM

    Pulse Drain Current Tested①

    TA =25°C

    20.4

    A

     

    ID

     

    Continuous Drain Current

    TA =25°C

    5.1

     

    A

    TA =70°C

    4

     

    PD

     

    Maximum Power Dissipation

    TA =25°C

    1.5

     

    W

    TA =70°C

    0.9

    Rq JA

    Thermal Resistance Junction-Ambient

    80

    °C/W



    Symbol

    Parameter

    Condition

    Min

    Typ

    Max

    Unit

    Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)

    V(BR)DSS

    Drain-Source Breakdown Voltage

    VGS=0V ID=250μA

    30

    --

    --

    V

     

    IDSS

     

    Zero Gate Voltage Drain Current(TA=25℃)

     

    VDS=30V, VGS=0V

     

    --

     

    --

     

    1

     

    μA

    Zero Gate Voltage Drain Current(TA=125℃)

    VDS=24V, VGS=0V

    --

    --

    100

    uA

    IGSS

    Gate-Body Leakage Current

    VGS=±16V, VDS=0V

    --

    --

    ±100

    nA

    VGS(TH)

    Gate Threshold Voltage

    VDS=VGS, ID=250μA

    0.5

    0.8

    1.2

    V

    RDS(ON)

    Drain-Source On-State Resistance②

    VGS=10V, ID=4A

    --

    28

    36

    m?

    RDS(ON)

    Drain-Source On-State Resistance②

     

    VGS=4.5V, ID=3A

     

    --

     

    34

     

    50

     

    m?

    RDS(ON)

    Drain-Source On-State Resistance②

     

    VGS=3.3V, ID=2A

     

    --

     

    40

     

    60

     

    m?

    RDS(ON)

    Drain-Source On-State Resistance②

     

    VGS=2.5V, ID=1A

     

    --

     

    55

     

    80

     

    m?

    Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)

    Ciss

    Input Capacitance

     

     

    VDS=15V, VGS=0V,

    f=1MHz

    --

    240

    --

    pF

    Coss

    Output Capacitance

    --

    35

    --

    pF

    Crss

    Reverse Transfer Capacitance

    --

    30

    --

    pF

    Qg

    Total Gate Charge

     

    VDS=15V ID=4A, VGS=4.5V

    --

    3.1

    --

    nC

    Qgs

    Gate Source Charge

    --

    0.4

    --

    nC

    Qgd

    Gate Drain Charge

    --

    1.3

    --

    nC

    Switching Characteristics

    td(on)

    Turn on Delay Time

     

     

    VDD=15V, ID=1A, RG=3.3?, VGS=10V

    --

    4.4

    --

    ns

    tr

    Turn on Rise Time

    --

    2.6

    --

    ns

    td(off)

    Turn Off Delay Time

    -

    25.5

    --

    ns

    tf

    Turn Off Fall Time

    --

    3.3

    --

    ns

    Source Drain Diode Characteristics

    ISD

    Source drain current(Body Diode)

    TA=25℃

    --

    --

    1.8

    A

    VSD

     

    Forward on voltage②

    Tj=25℃, ISD=4A,

    VGS=0V

     

    --

     

    0.85

     

    1.2

     

    V



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